- title
- Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar Transistors
- Please use the following URL when quoting:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-921301
- publication_date
- 2024
- Date of submission
- 06.11.2023
- Date of defense
- 10.04.2024
- Abstract (EN)
- This work investigates the compact- and TCAD modeling of III-V semiconductor based HBTs for high-power and high-speed applications. It demonstrates an approach for modeling such devices that connects compact- and TCAD modeling of such technologies. Compact model extensions are derived based on TCAD simulation. Compact modeling results for two state-of-the-art technologies are presented.
- Keywords (DE)
- III-V Halbleiter, HBT, TCAD, InP, HICUM/L2
- Keywords (EN)
- III-V semiconductor, HBT, TCAD, InP, HICUM/L2, Compact Modeling
- Classification (DDC)
- 621
- Classification (RVK)
- ZN 4810
- Examiner
- Prof. Dr. Michael Schröter
- Prof. Mark Rodwell
- supervisor
- Prof. Dr. Michael Schröter
- Awarding institution
- Technische Universität Dresden, Dresden
- Project sponsoring
- Deutsche Forschungsgemeinschaft Compact Modeling and Device Simulation of Terahertz InGaAs/InP Heterojunction Bipolar Transistors
ID: 438512651 - version
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-921301
- Qucosa date of publication
- 11.07.2024
- Document type
- doctoral_thesis
- Document language
- English
- licence
CC BY 4.0- tableofcontents
1. Introduction 2. Physical Models for TCAD Simulation 3. Bulk Calibration of Augmented Drift-Diffusion Solver 4. Device Calibration of aDD Solver 5. Application of the GICCR to III-V HBTs 6. Verification of the HICUM/L2 Model Core 7. Model Application to TSC250 InP/InGaAs HBT 8. Model Application to ETH InP/GaAsSb HBT 9. Conclusion and Outlook