- title
- Material perspectives of HfO₂-based ferroelectric films for device applications
- Please use the following URL when quoting:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-796473
- conference
- IEEE International Electron Devices Meeting (IEDM). San Francisco, 07.-11.12.2019
- original_in_proceeding00000
- 2019 International Electron Devices Meeting : Proceedings
Erscheinungsort: New York, NY
Verlag: IEEE
Erscheinungsjahr: 2020
Seiten: 15.1.1-15.1.4 - publication_date
- 2020
- Abstract (EN)
- Ferroelectric HfO₂ attracts a huge amount of attention not only for memory and negative capacitance, but also for programmable logic including memory-in-logic and neuromorphic applications. However, the understanding of material fundamentals still needs to be improved. This paper gives material fundamentals and new insights to this ferroelectric material for future device applications. In particular, the key role of dopants, effects of the interface on the ferroelectric phase, and a detailed discussion of the switching kinetics are of central focus. Based on material properties newly obtained, we discuss opportunities of ferroelectric HfO₂ for device applications.
- otherVersion0000
- Link zum Artikel, der zuerst in der IEEE Xplore Digital Library erschienen ist:
DOI: 10.1109/IEDM19573.2019.8993464 - Keywords (DE)
- ferroelektrische Materialien, ferroelektrische dünne Schichten, Hafniumverbindungen, Überblicke
- Keywords (EN)
- ferroelectric materials, ferroelectric thin films, hafnium compounds, reviews
- Classification (DDC)
- 621.3
- Publishing house
- IEEE, New York, NY
- Project sponsoring
- Japanese Science and Technology Agency (JST)
Core research for revolutionary science and technology (JST-CREST)
ID: JPMJCR14F2 - version
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-796473
- Qucosa date of publication
- 20.06.2022
- Document type
- in_proceeding
- Document language
- English
- licence
