- Titel
- Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar Transistors
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-921301
- Erstveröffentlichung
- 2024
- Datum der Einreichung
- 06.11.2023
- Datum der Verteidigung
- 10.04.2024
- Abstract (EN)
- This work investigates the compact- and TCAD modeling of III-V semiconductor based HBTs for high-power and high-speed applications. It demonstrates an approach for modeling such devices that connects compact- and TCAD modeling of such technologies. Compact model extensions are derived based on TCAD simulation. Compact modeling results for two state-of-the-art technologies are presented.
- Freie Schlagwörter (DE)
- III-V Halbleiter, HBT, TCAD, InP, HICUM/L2
- Freie Schlagwörter (EN)
- III-V semiconductor, HBT, TCAD, InP, HICUM/L2, Compact Modeling
- Klassifikation (DDC)
- 621
- Klassifikation (RVK)
- ZN 4810
- GutachterIn
- Prof. Dr. Michael Schröter
- Prof. Mark Rodwell
- BetreuerIn Hochschule / Universität
- Prof. Dr. Michael Schröter
- Den akademischen Grad verleihende / prüfende Institution
- Technische Universität Dresden, Dresden
- Förder- / Projektangaben
- Deutsche Forschungsgemeinschaft Compact Modeling and Device Simulation of Terahertz InGaAs/InP Heterojunction Bipolar Transistors
ID: 438512651 - Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-921301
- Veröffentlichungsdatum Qucosa
- 11.07.2024
- Dokumenttyp
- Dissertation
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
CC BY 4.0- Inhaltsverzeichnis
1. Introduction 2. Physical Models for TCAD Simulation 3. Bulk Calibration of Augmented Drift-Diffusion Solver 4. Device Calibration of aDD Solver 5. Application of the GICCR to III-V HBTs 6. Verification of the HICUM/L2 Model Core 7. Model Application to TSC250 InP/InGaAs HBT 8. Model Application to ETH InP/GaAsSb HBT 9. Conclusion and Outlook