- AutorIn
- Shaoling Bai Technische Universität Dresden, Dresden, Germany
- Katherina HaaseTechnische Universität Dresden, Dresden, Germany
- Jonathan Perez AndradeTechnische Universität Dresden, Dresden, Germany
- Mike Hambsch
- Felix Talnack
- Vojtech Millek
- Anupam Prasoon
- Jinxin Liu
- Kerstin Arnhold
- Susanne Boye
- Xinliang Feng
- Stefan C. B. Mannsfeld
- Titel
- Impact of Thermal Annealing on the Dissolution of Semiconducting Polymer Thin Films
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-989540
- Quellenangabe
- Advanced electronic materials
Erscheinungsjahr: 2024
Jahrgang: 10
Heft: 7
E-ISSN: 2199-160X
Artikelnummer: 2300801 - Erstveröffentlichung
- 2024
- Abstract (EN)
- Here, the effect of thermal annealing (TA) on the stability of solution-sheared thin films of the semiconducting polymer poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione-3,6-diyl)-alt-(2,2′;5′,2′’;5′’,2′’’-quaterthiophen-5,5′’’-diyl)] (PDPP4T) against the original coating solvent is studied, and it is shown that TA significantly improves the solvent resistance of semiconducting polymer films. Specifically, after the thin films are annealed at or above a critical temperature, the thin film thickness is largely retained when exposed to the original solvent, while for lower annealing temperatures material loss occurs, i.e., the thin film thickness is reduced due to rapid dissolution. The results of various techniques including grazing-incidence wide-angle x-ray scattering (GIWAXS), atomic force microscopy (AFM), and ultraviolet-visible-near infrared (UV–vis-NIR) absorption spectroscopy suggest physical changes as the cause for the increased solvent resistance. Such annealed films also show stable electrical characteristics in bottom-gate, top-contact (BGTC) organic field-effect transistors (OFETs) even after solvent exposure. In initial tests, a multitude of technologically relevant polymers show such behavior, underlining the potential impact of such temperature treatments for the fabrication of multi-layer polymer devices.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift „Advanced electronic materials” im Verlag Wiley-VCH erschienen ist.
DOI: 10.1002/aelm.202300801 - Verweis
- Ergänzendes Material ist unter folgendem Link zu finden.
Link: https://advanced.onlinelibrary.wiley.com/action/downloadSupplement?doi=10.1002%2Faelm.202300801&file=aelm679-sup-0001-SuppMat.pdf - Freie Schlagwörter (EN)
- multi-layer deposition, OFETs, polymer semiconductor, sequential solution process, thermal annealing, thermal cross-linking
- Klassifikation (DDC)
- 621.3
- Verlag
- Wiley-VCH, Weinheim
- Förder- / Projektangaben
- Europäischer Sozialfonds (ESF)
Organic nanometer-scale morphology control
(OrgNanoMorph)
ID: 100 382 168 - Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-989540
- Veröffentlichungsdatum Qucosa
- 27.07.2026
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
CC BY 4.0