- Titel
- Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-898298
- Quellenangabe
- Advanced materials interfaces
Erscheinungsjahr: 2023
Jahrgang: 10
Heft: 19
E-ISSN: 2196-7350
Artikelnummer: 2201914 - Erstveröffentlichung
- 2022
- Abstract (EN)
- Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the ionic-electronic transduction yield excellent potential for the field of implantable or wearable sensing technology. However, depletion-mode operation PEDOT:PSS-based OECTs cause high static power dissipation in electronic circuits, limiting their application in electronic systems. Hence, having control over the threshold voltage is of utmost technological importance. Here, PEDOT:PSS-based dual-gate OECTs with solid-state electrolyte where the threshold voltage is seamlessly adjustable during operation are demonstrated. It is shown that the degree of threshold voltage tuning linearly depends on the gate capacitance, which is a straightforward approach for circuit designers to adjust the threshold voltage only by the device dimensions. The PEDOT:PSS-based dual-gate OECTs show excellent device performance and can be pushed to accumulation-mode operation, resulting in a simplified and relaxed design of complementary inverters.
- Andere Ausgabe
- Link zum Artikel der zuerst in der Zeitschrift 'Advanced materials interfaces' bei Wiley erschienen ist.
DOI: 10.1002/admi.202201914 - Freie Schlagwörter (DE)
- Dual-Gates-Inverter, organische elektrochemische Transistoren, PEDOT:PSS, Schwellenspannungssteuerung
- Freie Schlagwörter (EN)
- dual-gates inverters, organic electrochemical transistors, PEDOT:PSS, threshold voltage control
- Klassifikation (DDC)
- 540
- 600
- Verlag
- Wiley-VCH, Weinheim
- Förder- / Projektangaben
- Europäischen Sozialfonds (ESF)
(OrgaNanoMorph)
ID: 100382168 - Hector Fellow Academy ID: 30000619
- Bundesministerium für Bildung und Forschung (BMBF)
(BAYOEN)
ID: 01IS21089 - European Commission (EC)
H2020 | RIA
Emerging Printed Electronics Research Infrastructure
(EMERGE)
ID: 101008701 - Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-898298
- Veröffentlichungsdatum Qucosa
- 01.03.2024
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
CC BY 4.0