- Titel
- Review and perspective on ferroelectric HfO₂-based thin films for memory applications
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-814866
- Quellenangabe
- MRS Communications
Erscheinungsjahr: 2018
Jahrgang: 8
Seiten: 795-808
E-ISSN: 2159-6867 - Erstveröffentlichung
- 2018
- Abstract (EN)
- The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift 'MRS Communications' bei Springer erschienen ist
DOI: https://doi.org/10.1557/mrc.2018.175 - Freie Schlagwörter (DE)
- Ferroelektrizität, Fluorit-Struktur, Metalloxid-Halbleiter-Kompatibilität, Speicheranwendungen
- Freie Schlagwörter (EN)
- ferroelectricity, fluorite-structure, metal oxide semiconductor-compatibility, memory applications
- Klassifikation (DDC)
- 670
- Verlag
- Springer, Berlin
- Förder- / Projektangaben
- National Research Foundation of the South Korean government (EU)
Global Research Laboratory Program
ID: 2012 1A1A2040157 - Europäische Union Europäischer Fonds für regionale Entwicklung
(EFRE) - Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-814866
- Veröffentlichungsdatum Qucosa
- 17.10.2022
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
