- AutorIn
- Everett D. Grimley
- Tony SchenkNanoelectronik Materials Laboratory GmbH, Dresden
- Thomas MikolajickTechnische Universität Dresden, Fakultät Elektrotechnik und Informationstechnik, Institut für Halbleiter- und Mikrosystemtechnik (IHM), Professur für Nanoelektronik#Nanoelectronik Materials Laboratory GmbH, Dresden
- Uwe Schroeder
- James M. LeBeau
- Titel
- Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO₂
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-805082
- Quellenangabe
- Advanced Electronic Materials
Erscheinungsjahr: 2018
Jahrgang: 5
Heft: 5
Seiten: 1701258-1-1701258-9
E-ISSN: 2199-160X - Erstveröffentlichung
- 2018
- Abstract (EN)
- Though ferroelectric HfO₂ thin films are now well characterized, little is currently known about their grain substructure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and phase interconversion. Here, scanning transmission electron microscopy is applied to investigate the atomic structure of boundaries in these materials. It is found that orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries form throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift 'Advanced Electronic Materials' bei Wiley erschienen ist:
DOI: https://doi.org/10.1002/admi.201701258 - Freie Schlagwörter (DE)
- dünne Schichten, Speicher, Transistoren, Hochwinkel-Dunkelfeld (HAADF) Raster-Transmissions-Elektronenmikroskopie (STEM), HAADF-STEM, Domänenwände, ferroelektrisches HfO2, Interphasengrenzen
- Freie Schlagwörter (EN)
- thin films, memories, transistors, high-angle annular dark-field (HAADF) Scanning Transmission Electron Microscopy (STEM), HAADF-STEM, domain walls, ferroelectric HfO2, interphase boundaries
- Klassifikation (DDC)
- 621.3
- Verlag
- Wiley-VCH, Weinheim
- Förder- / Projektangaben
- Deutsche Forschungsgemeinschaft (DFG)
Inferox
Ferroelektrisches Zirkonoxid für piezo- und pyroelektrische Bauelemente
(Zeppelin)
ID: 433647091 - National Science Foundation (NSF)
ID: DMR-1350273 - Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-805082
- Veröffentlichungsdatum Qucosa
- 26.08.2022
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis