- AutorIn
- F. P. G. Fengler Nanoelectronic Materials Laboratory GmbH, Dresden
- M. HoffmanNanoelectronic Materials Laboratory GmbH, Dresden
- S. SlesazeckNanoelectronic Materials Laboratory GmbH, Dresden
- T. Mikolajick
- U. Schroeder
- Titel
- On the relationship between field cycling and imprint in ferroelectric Hf₀.₅Zr₀.₅O₂
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-804452
- Quellenangabe
- Journal of Applied Physics
Erscheinungsjahr: 2018
Jahrgang: 123
Heft: 20
Seiten: 204101-1-204101-8
E-ISSN: 1089-7550 - Erstveröffentlichung
- 2018
- Abstract (EN)
- Manifold research has been done to understand the detailed mechanisms behind the performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together with the imprint might be the most controversially discussed phenomena so far. Among crystallographic phase change contributions and oxygen vacancy diffusion, electron trapping as the origin has been discussed recently. In this publication, we provide evidence that the imprint is indeed caused by electron trapping into deep states at oxygen vacancies. This impedes the ferroelectric switching and causes a shift of the hysteresis. Moreover, we show that the wake-up mechanism can be caused by a local imprint of the domains in the pristine state by the very same root cause. The various domain orientations together with an electron trapping can cause a constriction of the hysteresis and an internal bias field in the pristine state. Additionally, we show that this local imprint can even cause almost anti-ferroelectric like behavior in ferroelectric films.
- Andere Ausgabe
- Link zum Artikel, der zuerst im 'Journal of Applied Physics' bei AIP Publishing erschienen ist:
DOI: https://doi.org/10.1063/1.5026424 - Freie Schlagwörter (DE)
- Dielektrische Eigenschaften, kristallographische Defekte, Ferroelektrische Kondensatoren, Übergangsmetalloxide, Ferroelektrische Werkstoffe
- Freie Schlagwörter (EN)
- Dielectric properties, Crystallographic defects, Ferroelectric capacitors, Transition metal oxides, Ferroelectric materials
- Klassifikation (DDC)
- 530
- Verlag
- AIP Publishing, Melville, NY
- Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-804452
- Veröffentlichungsdatum Qucosa
- 17.08.2022
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis