- Titel
- Interplay between ferroelectric and resistive switching in doped crystalline HfO₂
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-804156
- Quellenangabe
- Journal of Applied Physics
Erscheinungsjahr: 2018
Jahrgang: 123
Heft: 13
Seiten: 134102-1-134102-9
E-ISSN: 1089-7550 - Erstveröffentlichung
- 2018
- Abstract (EN)
- Hafnium oxide is widely used for resistive switching devices, and recently it has been discovered that ferroelectricity can be established in (un-)doped hafnium oxide as well. Previous studies showed that both switching mechanisms are influenced by oxygen vacancies. For resistive switching, typically amorphous oxide layers with an asymmetric electrode configuration are used to create a gradient of oxygen vacancies. On the other hand, ferroelectric switching is performed by having symmetric electrodes and requires crystalline structures. The coexistence of both effects has recently been demonstrated. In this work, a detailed analysis of the reversible interplay of both switching mechanisms within a single capacitor cell is investigated. First, ferroelectric switching cycles were applied in order to drive the sample into the fatigued stage characterized by increased concentration of oxygen vacancies in the oxide layer. Afterwards, a forming step that is typical for the resistive switching devices was utilized to achieve a soft breakdown. In the next step, twofold alternation between the high and low resistance state is applied to demonstrate the resistive switching behavior of the device. Having the sample in the high resistance state with a ruptured filament, ferroelectric switching behavior is again shown within the same stack. Interestingly, the same endurance as before was observed without a hard breakdown of the device. Therefore, an effective sequence of ferroelectric—resistive—ferroelectric switching is realized. Additionally, the dependence of the forming, set, and reset voltage on the ferroelectric cycling stage (pristine, woken-up and fatigued) is analyzed giving insight into the physical device operation.
- Andere Ausgabe
- Link zum Artikel, der zuerst im 'Journal of Applied Physics' bei AIP Publishing erschienen ist:
DOI: https://doi.org/10.1063/1.5015985 - Freie Schlagwörter (DE)
- Dielektrische Eigenschaften, kristallographische Defekte, Übergangsmetalloxide, Ferroelektrische Materialien, Kristallstruktur
- Freie Schlagwörter (EN)
- Dielectric properties, Crystallographic defects, Transition metal oxides, Ferroelectric materials, Crystal structure
- Klassifikation (DDC)
- 530
- Verlag
- AIP Publishing, Melville, NY
- Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-804156
- Veröffentlichungsdatum Qucosa
- 16.08.2022
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
