- Titel
- Impact of BTI Stress on RF Small Signal Parameters of FDSOI MOSFETs
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-797051
- Konferenz
- IEEE International Integrated Reliability Workshop (IIRW). South Lake Tahoe, 13.-17.10. 2019
- Quellenangabe
- 2019 IEEE International Integrated Reliability Workshop (IIRW)
; Proceedings
Herausgeber: Institute of Electrical and Electronics Engineers
Erscheinungsort: New York, NY
Verlag: IEEE
Erscheinungsjahr: 2020 - Erstveröffentlichung
- 2020
- Abstract (EN)
- The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond the conventional DC methodology. In this work, the influence of bias temperature instability (BTI) stress on RF small signal parameters is shown. The correlation between degradation of DC and RF parameters is established which enables the empirical modelling of stress induced changes. Furthermore, S-Parameters characterization is demonstrated as the tool to qualitatively distinguish between HCI and BTI degradation mechanisms with the help of extracted small signal gate capacitances.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der IEEE Xplore Digital Library erschienen ist:
DOI: 10.1109/IIRW47491.2019.8989903 - Freie Schlagwörter (DE)
- bias temperature instability (BTI), fully depleted silicon on insulator (FDSOI), RF-Zuverlässigkeit, S-Parameter
- Freie Schlagwörter (EN)
- BTI, FDSOI, RF-Reliability, S-Parameters
- Klassifikation (DDC)
- 621.3
- Verlag
- IEEE, New York, NY
- Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-797051
- Veröffentlichungsdatum Qucosa
- 22.06.2022
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
