- Titel
- Retention Characteristics of Hf₀.₅Zr₀.₅O₂-based Ferroelectric Tunnel Junctions
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-775808
- Konferenz
- IEEE 11th International Memory Workshop (IMW). Monterey, CA, 12.-15. Mai 2019
- Quellenangabe
- 2019 IEEE 11th International Memory Workshop
Herausgeber: Institute of Electrical and Electronics Engineers (IEEE)
Erscheinungsort: New York, NY
Verlag: IEEE
Erscheinungsjahr: 2019 - Erstveröffentlichung
- 2019
- Abstract (EN)
- We report on the retention properties of double-layer hafnium zirconium oxide (Hf₀.₅Zr₀.₅O₂; HZO) based ferroelectric tunnel junctions (FTJ). Utilizing HZO as the ferroelectric layer and aluminum oxide (Al₂ O₃) as the tunneling barrier a scalable FTJ memory operation with good endurance and an on/off ratio of about 10 was achieved. Due to inherent depolarization fields from the double layer structure, the device suffers from strong retention loss over time. An extrapolation to 10 years at room temperature shows vanishing differences between the on and off state currents. We propose a way to avert this retention loss by using a constant bias that can be built-in by a work function difference from the metal electrode. This leads to more stable on-current retention and only small off-current increase, giving rise to an improved retention behavior of the FTJ.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der IEEE Xplore Digital Library erschienen ist
DOI: 10.1109/IMW.2019.8739765 - Freie Schlagwörter (DE)
- ferroelektrischer Tunnelübergang, Hf₀.₅Zr₀.₅O₂, Speicher, Speicherung
- Freie Schlagwörter (EN)
- ferroelectric tunnel junction, Hf₀.₅Zr₀.₅O₂, memory, retention
- Klassifikation (DDC)
- 621.3
- Verlag
- IEEE, New York, NY
- Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-775808
- Veröffentlichungsdatum Qucosa
- 26.01.2022
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
