- Titel
- Pattern Formation With Locally Active S-Type NbOₓ Memristors
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-767760
- Quellenangabe
- IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society
Erscheinungsjahr: 2019
Jahrgang: 66
Heft: 7
Seiten: 2627-2638
E-ISSN: 1558-0806 - Erstveröffentlichung
- 2019
- Abstract (EN)
- The main focus of this paper is the evolution of complex behavior in a system of coupled nonlinear memristor circuits depending on the applied coupling conditions. Thereby, the parameter space for the local activity and the edge-of-chaos domain will be determined to enable the emergence of the pattern formation in locally coupled cells according to Chua's principle. Each cell includes a Niobium oxide-based memristor, which may feature a locally active behavior once it is suitably biased on the negative differential resistance region of its DC current-voltage characteristic. It will be shown that there exists a domain of parameters under which each uncoupled cell may become locally active around a stable bias state. More specifically, under these conditions, the coupled cells are on the edge-of-chaos, and can support the static and dynamic pattern formation. The emergence of such complex spatio-temporal behavior in homogeneous structures is a prerequisite for information processing. The theoretical results are confirmed by
- Andere Ausgabe
- Link zum Artikel der zuerst in der Zeitschrift ' IEEE transactions on circuits and systems : a publication of the IEEE Circuits and Systems Society. 1, Regular Papers' erschienen ist
DOI: 10.1109/TCSI.2019.2894218 - Freie Schlagwörter (DE)
- Lokale Aktivität, Edge-of-Chaos, Memristor, nichtlineare Dynamik, Musterbildung
- Freie Schlagwörter (EN)
- Local activity, edge-of-chaos, memristor, nonlinear dynamics, pattern formation
- Klassifikation (DDC)
- 000
- 620
- Verlag
- IEEE, New York, NY
- Version / Begutachtungsstatus
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-767760
- Veröffentlichungsdatum Qucosa
- 26.11.2021
- Dokumenttyp
- Artikel
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis
