- AutorIn
- S. Killge Institute of Semiconductor and Microsystems Technology (IHM), Technische Universität Dresden
- S. CharaniaInstitute of Semiconductor and Microsystems Technology (IHM), Technische Universität Dresden
- K. RichterInstitute of Semiconductor and Microsystems Technology (IHM), Technische Universität Dresden
- N. Neumann
- Z. Al-Husseini
- D. Plettemeier
- J. W. Bartha
- Titel
- Realization of optical multimode TSV waveguides for Si-Interposer in 3D-chip-stacks
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-351387
- Konferenz
- SPIE Optics + Optoelectronics. Prague, 24.-27. April 2017
- Quellenangabe
- Micro-structured and Specialty Optical Fibres V
Herausgeber: Kyriacos Kalli
Herausgeber: Jiri Kanka
Herausgeber: Alexis Mendez
Herausgeber: Pavel Peterka
Erscheinungsort: Bellingham, Wash.
Verlag: SPIE
Erscheinungsjahr: 2017
Bandnummer Schriftenreihe: 10232 - Erstveröffentlichung
- 2017
- Abstract (EN)
- Optical connectivity has the potential to outperform copper-based TSVs in terms of bandwidth at the cost of more complexity due to the required electro-optical and opto-electrical conversion. The continuously increasing demand for higher bandwidth pushes the breakeven point for a profitable operation to shorter distances. To integrate an optical communication network in a 3D-chip-stack optical through-silicon vertical VIAs (TSV) are required. While the necessary effort for the electrical/optical and vice versa conversion makes it hard to envision an on-chip optical interconnect, a chip-to-chip optical link appears practicable. In general, the interposer offers the potential advantage to realize electro-optical transceivers on affordable expense by specific, but not necessarily CMOS technology. We investigated the realization and characterization of optical interconnects as a polymer based waveguide in high aspect ratio (HAR) TSVs proved on waferlevel. To guide the optical field inside a TSV as optical-waveguide or fiber, its core has to have a higher refractive index than the surrounding material. Comparing different material / technology options it turned out that thermal grown silicon dioxide (SiO2) is a perfect candidate for the cladding (nSiO2 = 1.4525 at 850 nm). In combination with SiO2 as the adjacent polymer layer, the negative resist SU-8 is very well suited as waveguide material (nSU-8 = 1.56) for the core. Here, we present the fabrication of an optical polymer based multimode waveguide in TSVs proved on waferlevel using SU-8 as core and SiO2 as cladding. The process resulted in a defect-free filling of waveguide TSVs with SU-8 core and SiO2 cladding up to aspect ratio (AR) 20:1 and losses less than 3 dB.
- Andere Ausgabe
- Link zum Artikel, der zuerst in der Zeitschrift 'Proceedings of SPIE' erschienen ist.
DOI: 10.1117/12.2265168 - Freie Schlagwörter (DE)
- optische Verbindungen; polymere Lichtwellenleiter, Durchgangssilizium-VIAs
- Freie Schlagwörter (EN)
- optical interconnects; polymer optical waveguides, through-silicon VIAs
- Klassifikation (DDC)
- 620
- Verlag
- SPIE, Bellingham, Wash.
- Förder- / Projektangaben
- European Social Fund Atto3D - Communication infrastructure for atto-networks in 3DChip-Stacks
ID: 100238554 - European Social Fund 3DCSI - 3D Chip Stack Intraconnects
ID: 100098177 - Version / Begutachtungsstatus
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-351387
- Veröffentlichungsdatum Qucosa
- 06.09.2019
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch
- Lizenz / Rechtehinweis