- authors00000
- Hsin Tseng Technische Universität Dresden, Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics
- Anton WeissbachTechnische Universität Dresden, Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics
- Juzef KucinskiTechnische Universität Dresden, Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics
- Ali Solgi
- Rakesh Nair
- Lukas M. Bongartz
- Giuseppe Ciccone
- Matteo Cucchi
- Karl Leo
- Hans Kleemann
- title
- Threshold Voltage Control in Dual-Gate Organic Electrochemical Transistors
- Please use the following URL when quoting:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-898298
- Source
- Advanced materials interfaces
Erscheinungsjahr: 2023
Jahrgang: 10
Heft: 19
E-ISSN: 2196-7350
Artikelnummer: 2201914 - publication_date
- 2022
- Abstract (EN)
- Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and the ionic-electronic transduction yield excellent potential for the field of implantable or wearable sensing technology. However, depletion-mode operation PEDOT:PSS-based OECTs cause high static power dissipation in electronic circuits, limiting their application in electronic systems. Hence, having control over the threshold voltage is of utmost technological importance. Here, PEDOT:PSS-based dual-gate OECTs with solid-state electrolyte where the threshold voltage is seamlessly adjustable during operation are demonstrated. It is shown that the degree of threshold voltage tuning linearly depends on the gate capacitance, which is a straightforward approach for circuit designers to adjust the threshold voltage only by the device dimensions. The PEDOT:PSS-based dual-gate OECTs show excellent device performance and can be pushed to accumulation-mode operation, resulting in a simplified and relaxed design of complementary inverters.
- otherVersion0
- Link zum Artikel der zuerst in der Zeitschrift 'Advanced materials interfaces' bei Wiley erschienen ist.
DOI: 10.1002/admi.202201914 - Keywords (DE)
- Dual-Gates-Inverter, organische elektrochemische Transistoren, PEDOT:PSS, Schwellenspannungssteuerung
- Keywords (EN)
- dual-gates inverters, organic electrochemical transistors, PEDOT:PSS, threshold voltage control
- Classification (DDC)
- 540
- 600
- Publishing house
- Wiley-VCH, Weinheim
- Project sponsoring
- Europäischen Sozialfonds (ESF)
(OrgaNanoMorph)
ID: 100382168 - Hector Fellow Academy ID: 30000619
- Bundesministerium für Bildung und Forschung (BMBF)
(BAYOEN)
ID: 01IS21089 - European Commission (EC)
H2020 | RIA
Emerging Printed Electronics Research Infrastructure
(EMERGE)
ID: 101008701 - version
- publizierte Version / Verlagsversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-898298
- Qucosa date of publication
- 01.03.2024
- Document type
- article
- Document language
- English
- licence
CC BY 4.0