- title
- Identification of the nature of traps involved in the field cycling of Hf₀.₅Zr₀.₅O₂-based ferroelectric thin films
- Please use the following URL when quoting:
- https://nbn-resolving.org/urn:nbn:de:bsz:14-qucosa2-811488
- Source
- Acta Materialia
Erscheinungsjahr: 2019
Jahrgang: 166
Seiten: 47-55
E-ISSN: 1359-6454 - publication_date
- 2019
- Abstract (EN)
- The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric memories as a viable option for low power non-volatile memories. However, due to the high coercive field of ferroelectric hafnium oxide, instabilities in the field cycling process are commonly observed and explained by the defect movement, defect generation and field induced phase transitions. In this work, the optical and transport experiments are combined with ab-initio simulations and transport modeling to validate that the defects which act as charge traps in ferroelectric active layers are oxygen vacancies. A new oxygen vacancy generation leads to a fast growth of leakage currents and a consequent degradation of the ferroelectric response in Hf₀.₅Zr₀.₅O₂ films. Two possible pathways of the Hf₀.₅Zr₀.₅O₂ ferroelectric property degradation are discussed.
- otherVersion0
- Link zum Artikel, der zuerst in der Zeitschrift 'Acta Materialia' bei Elsevier erschienen ist:
DOI: https://doi.org/10.1016/j.actamat.2018.12.008 - Keywords (DE)
- Ferroelektrische Hf₀.₅Zr₀.₅O₂, Defekte, Lumineszenz, Sauerstoffleerstellen, Leckströme
- Keywords (EN)
- Ferroelectric Hf₀.₅Zr₀.₅O₂, Defects, Luminescence, Oxygen vacancies, Leakage currents
- Classification (DDC)
- 670
- Publishing house
- Elsevier, Amsterdam
- Project sponsoring
- Russian Science Foundation (RSF)
ID: 14-19-00192 - version
- angenommene Version / Postprint / Autorenversion
- URN Qucosa
- urn:nbn:de:bsz:14-qucosa2-811488
- Qucosa date of publication
- 06.10.2022
- Document type
- article
- Document language
- English
- licence
CC BY-NC-ND 4.0